KBU8A vs KBU801GT0 feature comparison

KBU8A GeneSic Semiconductor Inc

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KBU801GT0 Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GENESIC SEMICONDUCTOR INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PSFM-W4 R-PSFM-W4
Non-rep Pk Forward Current-Max 300 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 6 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 31 1
Case Connection ISOLATED
JESD-609 Code e3
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN

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