M13S64164A-4BVAG2Y vs M13S64164A-5TVAG2Y feature comparison

M13S64164A-4BVAG2Y Elite Semiconductor Memory Technology Inc

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M13S64164A-5TVAG2Y Elite Semiconductor Memory Technology Inc

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Part Life Cycle Code Active Active
Ihs Manufacturer ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description TFBGA, TSOP2,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.7 ns 0.7 ns
Additional Feature AUTO REFRESH AUTO REFRESH
JESD-30 Code R-PBGA-B60 R-PDSO-G66
Length 13 mm 22.22 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type DDR1 DRAM DDR1 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 60 66
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 105 °C 105 °C
Operating Temperature-Min -40 °C -40 °C
Organization 4MX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TSOP2
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE
Seated Height-Max 1.2 mm 1.2 mm
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL GULL WING
Terminal Pitch 0.8 mm 0.65 mm
Terminal Position BOTTOM DUAL
Width 8 mm 10.16 mm
Base Number Matches 1 1

Compare M13S64164A-4BVAG2Y with alternatives

Compare M13S64164A-5TVAG2Y with alternatives