M13S64164A-5BVG2Y
vs
M13S64164A-5BG2Y
feature comparison
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
|
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
|
| Package Description |
TFBGA,
|
TFBGA,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.02
|
8542.32.00.02
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
0.7 ns
|
0.7 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-PBGA-B60
|
R-PBGA-B60
|
| Length |
13 mm
|
13 mm
|
| Memory Density |
67108864 bit
|
67108864 bit
|
| Memory IC Type |
DDR1 DRAM
|
DDR DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
60
|
60
|
| Number of Words |
4194304 words
|
4194304 words
|
| Number of Words Code |
4000000
|
4000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
4MX16
|
4MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
8 mm
|
8 mm
|
| Base Number Matches |
1
|
1
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare M13S64164A-5BVG2Y with alternatives
Compare M13S64164A-5BG2Y with alternatives