M95640-RMN3TG
vs
25AA640/PG
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
SOIC
|
DIP
|
| Package Description |
SOP,
|
0.300 INCH, PLASTIC, DIP-8
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Clock Frequency-Max (fCLK) |
2 MHz
|
1 MHz
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDIP-T8
|
| JESD-609 Code |
e4
|
e3
|
| Length |
4.9 mm
|
9.46 mm
|
| Memory Density |
65536 bit
|
65536 bit
|
| Memory IC Type |
EEPROM
|
EEPROM
|
| Memory Width |
8
|
8
|
| Moisture Sensitivity Level |
1
|
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Number of Words |
8192 words
|
8192 words
|
| Number of Words Code |
8000
|
8000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
8KX8
|
8KX8
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
SOP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Parallel/Serial |
SERIAL
|
SERIAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.75 mm
|
4.32 mm
|
| Serial Bus Type |
SPI
|
SPI
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
1.8 V
|
1.8 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
AUTOMOTIVE
|
COMMERCIAL
|
| Terminal Finish |
Nickel/Palladium/Gold (Ni/Pd/Au)
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Pitch |
1.27 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
3.9 mm
|
7.62 mm
|
| Write Cycle Time-Max (tWC) |
10 ms
|
5 ms
|
| Base Number Matches |
5
|
1
|
| Additional Feature |
|
DATA RETENTION > 200 YEARS; 4KV ESD PROTECTION; 1M ENDURANCE CYCLES
|
| Data Retention Time-Min |
|
200
|
| Endurance |
|
1000000 Write/Erase Cycles
|
|
|
|
Compare M95640-RMN3TG with alternatives
Compare 25AA640/PG with alternatives