MAP6KE130AE3 vs P6KE130AHE3/54 feature comparison

MAP6KE130AE3 Microchip Technology Inc

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P6KE130AHE3/54 New Jersey Semiconductor Products Inc

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Package Description ROHS COMPLIANT, PLASTIC, T-18, 2 PIN DO-15, 2 PIN
Reach Compliance Code compliant unknown
Factory Lead Time 40 Weeks
Breakdown Voltage-Max 137 V 137 V
Breakdown Voltage-Min 124 V 124 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-XALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 111 V 111 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 3
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 130.5 V
Clamping Voltage-Max 179 V
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-204AC
Reference Standard AEC-Q101; UL RECOGNIZED
Reverse Current-Max 1 µA
Reverse Test Voltage 111 V

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