MAP6KE150ATRE3 vs JANTX1N6463 feature comparison

MAP6KE150ATRE3 Microsemi Corporation

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JANTX1N6463 Semtech Corporation

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP SEMTECH CORP
Package Description O-PALF-W2 HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 158 V
Breakdown Voltage-Min 143 V 13.6 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-LALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.47 W 3 W
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 128 V 12 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 4
Factory Lead Time 18 Weeks
Samacsys Manufacturer SEMTECH
Breakdown Voltage-Nom 13.6 V
Clamping Voltage-Max 22.6 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reference Standard MIL-19500/551

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