MAPLAD15KP180AE3/TR vs MXLPLAD15KP180AE3TR feature comparison

MAPLAD15KP180AE3/TR Microsemi Corporation

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MXLPLAD15KP180AE3TR Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description R-PSSO-G1 R-PSSO-G1
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 221 V 221 V
Breakdown Voltage-Min 200 V 200 V
Breakdown Voltage-Nom 210.5 V 210.5 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 291 V 291 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PSSO-G1 R-PSSO-G1
Non-rep Peak Rev Power Dis-Max 15000 W 15000 W
Number of Elements 1 1
Number of Terminals 1 1
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 180 V 180 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C

Compare MAPLAD15KP180AE3/TR with alternatives

Compare MXLPLAD15KP180AE3TR with alternatives