MAPLAD18KP40AE3 vs MPLAD18KP40A feature comparison

MAPLAD18KP40AE3 Microchip Technology Inc

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MPLAD18KP40A Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Factory Lead Time 40 Weeks 40 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 49.1 V 49.1 V
Breakdown Voltage-Min 44.4 V 44.4 V
Breakdown Voltage-Nom 46.75 V 46.75 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 64.5 V 64.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 18000 W 18000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 AEC-Q101; MIL-STD-750
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 3
Reverse Current-Max 10 µA
Reverse Test Voltage 40 V

Compare MAPLAD18KP40AE3 with alternatives

Compare MPLAD18KP40A with alternatives