MASMBJ15CATR vs SMBJ15CR4G feature comparison

MASMBJ15CATR Microsemi Corporation

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SMBJ15CR4G Taiwan Semiconductor

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH; 750 EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 18.5 V 20.4 V
Breakdown Voltage-Min 16.7 V 16.7 V
Breakdown Voltage-Nom 17.6 V 18.55 V
Clamping Voltage-Max 24.4 V 26.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.38 W 3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 15 V 15 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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