MASMCJLCE10AE3TR vs MQSMCG5635AE3 feature comparison

MASMCJLCE10AE3TR Microsemi Corporation

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MQSMCG5635AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-214AB DO-215AB
Package Description R-PDSO-C2 R-PDSO-G2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 12.3 V 12.6 V
Breakdown Voltage-Min 11.1 V 11.4 V
Breakdown Voltage-Nom 11.7 V
Clamping Voltage-Max 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-215AB
JESD-30 Code R-PDSO-C2 R-PDSO-G2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10.2 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Terminal Finish MATTE TIN

Compare MASMCJLCE10AE3TR with alternatives

Compare MQSMCG5635AE3 with alternatives