MASMLJ10ATR vs SMLJ10A feature comparison

MASMLJ10ATR Microsemi Corporation

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SMLJ10A International Semiconductor Inc

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP INTERNATIONAL SEMICONDUCTOR INC
Part Package Code DO-214AB
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 LOW INDUCTANCE
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 11.7 V 11.7 V
Clamping Voltage-Max 17 V 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 5
Reverse Current-Max 5 µA

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