MB2S vs MB2S-T3 feature comparison

MB2S General Instrument Corp

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MB2S-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GENERAL INSTRUMENT CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 200 V 200 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Non-rep Pk Forward Current-Max 35 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.5 A 0.8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 0.000005 µA
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code No
Package Description R-PDSO-G4
Moisture Sensitivity Level 1

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