MEM5116D2DABG-3I
vs
M14D5121632A-3BVAG2H
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Contact Manufacturer
|
Contact Manufacturer
|
| Ihs Manufacturer |
MEMPHIS ELECTRONIC AG
|
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
|
| Package Description |
TFBGA,
|
TFBGA,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.28
|
8542.32.00.28
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
0.45 ns
|
0.45 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-PBGA-B84
|
R-PBGA-B84
|
| Length |
12.5 mm
|
12.5 mm
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
DDR DRAM
|
DDR DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
84
|
84
|
| Number of Words |
33554432 words
|
33554432 words
|
| Number of Words Code |
32000000
|
32000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Organization |
32MX16
|
32MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
8 mm
|
8 mm
|
| Base Number Matches |
1
|
1
|
| Operating Temperature-Max |
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Temperature Grade |
|
INDUSTRIAL
|
|
|
|
Compare MEM5116D2DABG-3I with alternatives
Compare M14D5121632A-3BVAG2H with alternatives