MFM8126JMB-12E
vs
M29F010IF12R
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOSAIC SEMICONDUCTOR INC
|
MOTOROLA INC
|
| Part Package Code |
QFJ
|
|
| Package Description |
CERAMIC, LCC-32
|
PLASTIC, LCC-32
|
| Pin Count |
32
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
120 ns
|
120 ns
|
| JESD-30 Code |
R-CQCC-J32
|
R-PQCC-J32
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
131072 words
|
131072 words
|
| Number of Words Code |
128000
|
128000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
85 °C
|
| Operating Temperature-Min |
-55 °C
|
-40 °C
|
| Organization |
128KX8
|
128KX8
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
5 V
|
5 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
MIL-STD-883
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
INDUSTRIAL
|
| Terminal Form |
J BEND
|
J BEND
|
| Terminal Position |
QUAD
|
QUAD
|
| Type |
NOR TYPE
|
NOR TYPE
|
| Base Number Matches |
2
|
2
|
| Additional Feature |
|
EMBEDDED ALGORITHM; AUTOMATIC WRITE; 100K WRITE/ERASE CYCLES MIN.
|
| Length |
|
13.97 mm
|
| Output Characteristics |
|
3-STATE
|
| Package Code |
|
QCCJ
|
| Seated Height-Max |
|
3.56 mm
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
4.5 V
|
| Terminal Pitch |
|
1.27 mm
|
| Width |
|
11.43 mm
|
|
|
|
Compare MFM8126JMB-12E with alternatives
Compare M29F010IF12R with alternatives