MJ15016G
vs
2SB857
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
15 A
|
4 A
|
| Collector-Emitter Voltage-Max |
120 V
|
50 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Number of Elements |
1
|
1
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
18 MHz
|
15 MHz
|
| Base Number Matches |
3
|
5
|
| Package Description |
|
,
|
| Date Of Intro |
|
2018-11-28
|
| DC Current Gain-Min (hFE) |
|
60
|
| JEDEC-95 Code |
|
TO-220AB
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Power Dissipation-Max (Abs) |
|
40 W
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
AMPLIFIER
|
| VCEsat-Max |
|
1 V
|
|
|
|