MJD112-001G vs MJD112-1 feature comparison

MJD112-001G onsemi

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MJD112-1 onsemi

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR ON SEMICONDUCTOR
Package Description IN-LINE, R-PSIP-T3 CASE 369-07, 3 PIN
Pin Count 3 3
Manufacturer Package Code CASE 369D-01 CASE 369-07
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 2 A 2 A
Collector-Emitter Voltage-Max 100 V 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200 200
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 25 MHz 25 MHz
Base Number Matches 1 2
Power Dissipation-Max (Abs) 20 W

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