MJD44H11-T1 vs MJD44H11TM feature comparison

MJD44H11-T1 Samsung Semiconductor

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MJD44H11TM Rochester Electronics LLC

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC ROCHESTER ELECTRONICS LLC
Package Description SMALL OUTLINE, R-PSSO-G2 DPAK-3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 8 A 8 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 40
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 20 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 50 MHz 50 MHz
VCEsat-Max 1 V
Base Number Matches 1 3
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-252
JEDEC-95 Code TO-252
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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