MJD44H11RL vs MJD44H11-T1 feature comparison

MJD44H11RL Rochester Electronics LLC

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MJD44H11-T1 Samsung Semiconductor

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Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC SAMSUNG SEMICONDUCTOR INC
Package Description PLASTIC, CASE 369C-01, DPAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Manufacturer Package Code CASE 369C-01
Reach Compliance Code unknown unknown
Case Connection COLLECTOR
Collector Current-Max (IC) 8 A 8 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 40
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 85 MHz 50 MHz
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.29.00.75
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 20 W
VCEsat-Max 1 V

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