MM54C200J
vs
MM54C200N
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
DIP, DIP16,.3
|
DIP,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
1200 ns
|
1200 ns
|
| I/O Type |
SEPARATE
|
|
| JESD-30 Code |
R-CDIP-T16
|
R-XDIP-T16
|
| JESD-609 Code |
e0
|
|
| Length |
19.43 mm
|
19.305 mm
|
| Memory Density |
256 bit
|
256 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
1
|
1
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
|
| Number of Terminals |
16
|
16
|
| Number of Words |
256 words
|
256 words
|
| Number of Words Code |
256
|
256
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
256X1
|
256X1
|
| Output Characteristics |
3-STATE
|
|
| Output Enable |
NO
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP16,.3
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
|
| Seated Height-Max |
5.08 mm
|
5.08 mm
|
| Supply Voltage-Max (Vsup) |
15 V
|
15 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
7.62 mm
|
| Base Number Matches |
4
|
1
|
|
|
|
Compare MM54C200J with alternatives
Compare MM54C200N with alternatives