MMBD914B vs BAS116LT1G feature comparison

MMBD914B International Semiconductor Inc

Buy Now Datasheet

BAS116LT1G onsemi

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC ONSEMI
Package Description R-PDSO-G3 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 0.9 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 2 A 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.004 µs 3 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 3 1
Pbfree Code Yes
Part Package Code SOT-23 (TO-236) 3 LEAD
Pin Count 3
Manufacturer Package Code 318-08
Factory Lead Time 7 Weeks, 4 Days
Samacsys Manufacturer onsemi
Application GENERAL PURPOSE
JEDEC-95 Code TO-236
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.225 W
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) 30

Compare MMBD914B with alternatives

Compare BAS116LT1G with alternatives