MMBF170LT1G
vs
MMBF170LT3
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Contact Manufacturer
|
Transferred
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
MOTOROLA INC
|
| Part Package Code |
SOT-23
|
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
CASE 318-08
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
0.5 A
|
0.5 A
|
| Drain-source On Resistance-Max |
5 Ω
|
5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-236AB
|
TO-236AB
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.225 W
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
3
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| HTS Code |
|
8541.21.00.95
|
| Power Dissipation Ambient-Max |
|
0.225 W
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare MMBF170LT1G with alternatives
Compare MMBF170LT3 with alternatives