MMBV2101LT1 vs MMBV2101LT1G feature comparison

MMBV2101LT1 Motorola Mobility LLC

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MMBV2101LT1G onsemi

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC ON SEMICONDUCTOR
Package Description R-PDSO-G3 LEAD FREE, PLASTIC, CASE 318-08, TO-236, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY HIGH Q, HIGH RELIABILITY
Breakdown Voltage-Min 30 V 30 V
Configuration SINGLE SINGLE
Diode Cap Tolerance 10% 10%
Diode Capacitance Ratio-Min 2.5 2.5
Diode Capacitance-Nom 6.8 pF 6.8 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.225 W 0.225 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.1 µA
Reverse Test Voltage 25 V
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code SOT-23 (TO-236) 3 LEAD
Pin Count 3
Manufacturer Package Code 318
Samacsys Manufacturer onsemi
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Quality Factor-Min 450
Rep Pk Reverse Voltage-Max 30 V
Time@Peak Reflow Temperature-Max (s) 30

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