MMBZ15VAWT1G
vs
MMBZ15VDLT3G
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
| Part Package Code |
SC-70
|
SOT-23 (TO-236) 3 LEAD
|
| Package Description |
R-PDSO-G3
|
TO-236, 3 PIN
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
CASE 419-04
|
318-08
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
15.75 V
|
|
| Breakdown Voltage-Min |
14.25 V
|
|
| Breakdown Voltage-Nom |
15 V
|
|
| Clamping Voltage-Max |
21 V
|
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
ZENER DIODE
|
| Forward Voltage-Max (VF) |
0.9 V
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| Non-rep Peak Rev Power Dis-Max |
40 W
|
|
| Number of Elements |
2
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
0.2 W
|
|
| Rep Pk Reverse Voltage-Max |
12 V
|
|
| Reverse Current-Max |
0.05 µA
|
|
| Reverse Test Voltage |
12 V
|
|
| Surface Mount |
YES
|
|
| Technology |
ZENER
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Factory Lead Time |
|
56 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MMBZ15VAWT1G with alternatives