MMBZ18VAL-13
vs
MMBZ18VALT3G
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
DIODES INC
|
ON SEMICONDUCTOR
|
| Package Description |
R-PDSO-G3
|
R-PDSO-G3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
18 V
|
18.9 V
|
| Breakdown Voltage-Min |
17.1 V
|
17.1 V
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
40 W
|
40 W
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.225 W
|
0.225 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
14.5 V
|
14.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
SOT-23
|
| Manufacturer Package Code |
|
CASE 318-08
|
| Breakdown Voltage-Nom |
|
18 V
|
| Clamping Voltage-Max |
|
25 V
|
| JEDEC-95 Code |
|
TO-236
|
|
|
|
Compare MMBZ18VAL-13 with alternatives
Compare MMBZ18VALT3G with alternatives