MMBZ33VAL
vs
MMBZ33VAL,215
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
NEXPERIA
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.80
|
| Diode Type |
ZENER DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
TO-236
|
| Package Description |
|
SOT-23, 3 PIN
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
SOT23
|
| Samacsys Manufacturer |
|
Nexperia
|
| Additional Feature |
|
IEC-61643-321
|
| Breakdown Voltage-Max |
|
34.65 V
|
| Breakdown Voltage-Min |
|
31.35 V
|
| Breakdown Voltage-Nom |
|
33 V
|
| Clamping Voltage-Max |
|
46 V
|
| Configuration |
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
|
SILICON
|
| Forward Voltage-Max (VF) |
|
0.9 V
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Peak Rev Power Dis-Max |
|
40 W
|
| Number of Elements |
|
2
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity |
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
|
0.36 W
|
| Reference Standard |
|
AEC-Q101; IEC-60134; IEC-61000-4-2
|
| Rep Pk Reverse Voltage-Max |
|
26 V
|
| Reverse Current-Max |
|
0.005 µA
|
| Reverse Test Voltage |
|
26 V
|
| Surface Mount |
|
YES
|
| Technology |
|
AVALANCHE
|
| Terminal Finish |
|
TIN
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
|
|
|
Compare MMBZ33VAL with alternatives
Compare MMBZ33VAL,215 with alternatives