MMBZ33VAL
vs
MMBZ33VALT1
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
ONSEMI
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Diode Type |
ZENER DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
235
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Base Number Matches |
1
|
3
|
| Rohs Code |
|
No
|
| Part Package Code |
|
SOT-23
|
| Package Description |
|
PLASTIC, CASE 318-08, 3 PIN
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
CASE 318-08
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Breakdown Voltage-Max |
|
34.65 V
|
| Breakdown Voltage-Min |
|
31.35 V
|
| Configuration |
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
TO-236
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e0
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Peak Rev Power Dis-Max |
|
40 W
|
| Number of Elements |
|
2
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity |
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
|
0.225 W
|
| Qualification Status |
|
Not Qualified
|
| Reference Voltage-Nom |
|
33 V
|
| Rep Pk Reverse Voltage-Max |
|
26 V
|
| Surface Mount |
|
YES
|
| Technology |
|
ZENER
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Voltage Tol-Max |
|
5%
|
| Working Test Current |
|
1 mA
|
|
|
|
Compare MMBZ33VAL with alternatives
Compare MMBZ33VALT1 with alternatives