MMBZ9V1AL-7
vs
MMBZ10VALT1G
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
DIODES INC
|
ON SEMICONDUCTOR
|
| Package Description |
PLASTIC PACKAGE-3
|
R-PDSO-G3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
9.56 V
|
10.5 V
|
| Breakdown Voltage-Min |
8.65 V
|
9.5 V
|
| Breakdown Voltage-Nom |
9.1 V
|
10 V
|
| Clamping Voltage-Max |
14 V
|
14.2 V
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
24 W
|
24 W
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.225 W
|
0.225 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
6 V
|
6.5 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
DUAL
|
| Base Number Matches |
2
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SOT-23
|
| Manufacturer Package Code |
|
CASE 318
|
| JEDEC-95 Code |
|
TO-236AB
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare MMBZ9V1AL-7 with alternatives
Compare MMBZ10VALT1G with alternatives