MMSF3P02HDR2 vs TPC8102 feature comparison

MMSF3P02HDR2 Rochester Electronics LLC

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TPC8102 Toshiba America Electronic Components

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC TOSHIBA CORP
Part Package Code SOT
Package Description CASE 751-07, SO-8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8 8
Manufacturer Package Code CASE 751-07
Reach Compliance Code unknown unknown
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 567 mJ 47 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 30 V
Drain Current-Max (ID) 5.6 A 6 A
Drain-source On Resistance-Max 0.075 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A 24 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
ECCN Code EAR99
HTS Code 8541.29.00.95
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 2.4 W
Power Dissipation-Max (Abs) 2.4 W

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