MP3510(W) vs GBJ3510 feature comparison

MP3510(W) Galaxy Semi-Conductor Co Ltd

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GBJ3510 Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD DIODES INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99
Breakdown Voltage-Min 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 35 A 3.6 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Base Number Matches 2 11
Samacsys Manufacturer Diodes Incorporated
Case Connection ISOLATED
Diode Element Material SILICON
JESD-30 Code R-PSFM-T4
Number of Terminals 4
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Reference Standard UL RECOGNIZED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

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