MPLAD15KP51CAE3 vs MXLPLAD15KP51CATR feature comparison

MPLAD15KP51CAE3 Microsemi Corporation

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MXLPLAD15KP51CATR Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description R-PSSO-G1 R-PSSO-G1
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Microsemi Corporation
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 62.7 V 62.7 V
Breakdown Voltage-Min 56.7 V 56.7 V
Breakdown Voltage-Nom 59.7 V 59.7 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 82.4 V 82.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PSSO-G1 R-PSSO-G1
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 15000 W 15000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 51 V 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 1

Compare MPLAD15KP51CAE3 with alternatives

Compare MXLPLAD15KP51CATR with alternatives