MRF176GU vs BLF548 feature comparison

MRF176GU TE Connectivity

Buy Now Datasheet

BLF548 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer TE CONNECTIVITY LTD NXP SEMICONDUCTORS
Pin Count 4 4
Manufacturer Package Code CASE 375-04 SOT262A2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection SOURCE SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 125 V 65 V
Drain Current-Max (ID) 16 A 15 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4 R-CDFM-F4
Number of Elements 2 2
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Pbfree Code Yes
Part Package Code SOT
Package Description FLANGE MOUNT, R-CDFM-F4
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY
Drain-source On Resistance-Max 0.3 Ω
Operating Temperature-Max 200 °C
Power Dissipation Ambient-Max 330 W
Power Dissipation-Max (Abs) 330 W
Power Gain-Min (Gp) 10 dB

Compare MRF176GU with alternatives

Compare BLF548 with alternatives