MRF5812R1
vs
2N5836
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.29.00.75
|
|
| Additional Feature |
LOW NOISE
|
|
| Collector Current-Max (IC) |
0.2 A
|
0.2 A
|
| Collector-Base Capacitance-Max |
2 pF
|
|
| Collector-Emitter Voltage-Max |
15 V
|
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
Single
|
| DC Current Gain-Min (hFE) |
30
|
25
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
| JESD-30 Code |
R-PDSO-G8
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
2
|
|
| Number of Terminals |
8
|
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1.67 W
|
|
| Power Dissipation-Max (Abs) |
1.7 W
|
2 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
5500 MHz
|
2000 MHz
|
| Base Number Matches |
5
|
4
|
|
|
|
Compare MRF5812R1 with alternatives