MSMBJ33A
vs
MASMBJ33AE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MDE SEMICONDUCTOR INC
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Base Number Matches |
3
|
2
|
| Package Description |
|
SMBJ, 2 PIN
|
| Factory Lead Time |
|
40 Weeks
|
| Breakdown Voltage-Max |
|
40.6 V
|
| Breakdown Voltage-Min |
|
36.7 V
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-214AA
|
| JESD-30 Code |
|
R-PDSO-C2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Peak Rev Power Dis-Max |
|
600 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity |
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
|
1.38 W
|
| Reference Standard |
|
IEC-61000-4-2, 4-4, 4-5; MIL-19500
|
| Rep Pk Reverse Voltage-Max |
|
33 V
|
| Surface Mount |
|
YES
|
| Technology |
|
AVALANCHE
|
| Terminal Finish |
|
MATTE TIN
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
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