MT29F2G01ABBGDWB-IT:G
vs
MT29F2G01AAAEDH4-IT:E
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
| Package Description |
,
|
9 X 11 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFBGA-63
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Factory Lead Time |
18 Weeks, 1 Day
|
|
| Samacsys Manufacturer |
Micron
|
Micron
|
| Memory IC Type |
FLASH
|
FLASH
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Programming Voltage |
1.8 V
|
2.7 V
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Clock Frequency-Max (fCLK) |
|
50 MHz
|
| JESD-30 Code |
|
R-PBGA-B63
|
| JESD-609 Code |
|
e1
|
| Length |
|
11 mm
|
| Memory Density |
|
2147483648 bit
|
| Memory Width |
|
1
|
| Number of Functions |
|
1
|
| Number of Terminals |
|
63
|
| Number of Words |
|
2147483648 words
|
| Number of Words Code |
|
2000000000
|
| Operating Mode |
|
SYNCHRONOUS
|
| Operating Temperature-Max |
|
85 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Organization |
|
2GX1
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Code |
|
VFBGA
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
|
SERIAL
|
| Seated Height-Max |
|
1 mm
|
| Supply Voltage-Max (Vsup) |
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
|
3.3 V
|
| Surface Mount |
|
YES
|
| Technology |
|
CMOS
|
| Temperature Grade |
|
INDUSTRIAL
|
| Terminal Finish |
|
TIN SILVER COPPER
|
| Terminal Form |
|
BALL
|
| Terminal Pitch |
|
0.8 mm
|
| Terminal Position |
|
BOTTOM
|
| Width |
|
9 mm
|
|
|
|
Compare MT29F2G01ABBGDWB-IT:G with alternatives
Compare MT29F2G01AAAEDH4-IT:E with alternatives