MT41K512M16HA-125:ATR
vs
MT41K512M16TNA-107IT:E
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Micron
|
|
JESD-609 Code |
e1
|
|
Memory IC Type |
DDR3L DRAM
|
DDR DRAM
|
Terminal Finish |
TIN SILVER COPPER
|
|
Base Number Matches |
1
|
1
|
Package Description |
|
TFBGA,
|
HTS Code |
|
8542.32.00.36
|
Access Mode |
|
DUAL BANK PAGE BURST
|
Additional Feature |
|
AUTO/SELF REFRESH
|
JESD-30 Code |
|
R-PBGA-B96
|
Length |
|
14 mm
|
Memory Density |
|
8589934592 bit
|
Memory Width |
|
16
|
Number of Functions |
|
1
|
Number of Ports |
|
1
|
Number of Terminals |
|
96
|
Number of Words |
|
536870912 words
|
Number of Words Code |
|
512000000
|
Operating Mode |
|
SYNCHRONOUS
|
Organization |
|
512MX16
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Code |
|
TFBGA
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Seated Height-Max |
|
1.2 mm
|
Self Refresh |
|
YES
|
Supply Voltage-Max (Vsup) |
|
1.425 V
|
Supply Voltage-Min (Vsup) |
|
1.283 V
|
Supply Voltage-Nom (Vsup) |
|
1.35 V
|
Surface Mount |
|
YES
|
Technology |
|
CMOS
|
Terminal Form |
|
BALL
|
Terminal Pitch |
|
0.8 mm
|
Terminal Position |
|
BOTTOM
|
Width |
|
10 mm
|
|
|
|
Compare MT41K512M16HA-125:ATR with alternatives
Compare MT41K512M16TNA-107IT:E with alternatives