MT47H128M16RT-25EAIT:CTR vs IS46DR16128C-25DBLA1 feature comparison

MT47H128M16RT-25EAIT:CTR Micron Technology Inc

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IS46DR16128C-25DBLA1 Integrated Silicon Solution Inc

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Part Life Cycle Code Active Active
Ihs Manufacturer MICRON TECHNOLOGY INC INTEGRATED SILICON SOLUTION INC
Package Description , TFBGA, BGA84,9X15,32
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Memory IC Type DDR2 DRAM DDR2 DRAM
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN SILVER COPPER
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Rohs Code Yes
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 2147483648 bit
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 128MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Screening Level AEC-Q100
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.03 A
Supply Current-Max 0.54 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Compare MT47H128M16RT-25EAIT:CTR with alternatives

Compare IS46DR16128C-25DBLA1 with alternatives