MT47H64M16NF-25E:MTR vs MT47H64M16NF-25EAIT:M feature comparison

MT47H64M16NF-25E:MTR Micron Technology Inc

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MT47H64M16NF-25EAIT:M Micron Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICRON TECHNOLOGY INC MICRON TECHNOLOGY INC
Package Description FBGA-84 TFBGA,
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Additional Feature SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 95 °C
Operating Temperature-Min -40 °C
Organization 64MX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260 260
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Access Time-Max 0.4 ns
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
Length 12.5 mm
Output Characteristics 3-STATE
Package Equivalence Code BGA84,9X15,32
Refresh Cycles 8192
Screening Level AEC-Q100
Seated Height-Max 1.2 mm
Sequential Burst Length 4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.21 mA
Terminal Pitch 0.8 mm
Width 8 mm

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Compare MT47H64M16NF-25EAIT:M with alternatives