MT4HTF6464AY-40EX vs M378T6464EHS-CE6 feature comparison

MT4HTF6464AY-40EX Micron Technology Inc

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M378T6464EHS-CE6 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM, DIMM240,40
Pin Count 240 240
Reach Compliance Code compliant unknown
Access Mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Access Time-Max 0.6 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N240 R-XDMA-N240
JESD-609 Code e4
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 240 240
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 55 °C 70 °C
Operating Temperature-Min
Organization 64MX64 64MX64
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish GOLD
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8542.32.00.36
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Moisture Sensitivity Level 3
Output Characteristics 3-STATE
Package Equivalence Code DIMM240,40
Refresh Cycles 8192
Self Refresh YES
Standby Current-Max 0.04 A
Supply Current-Max 0.74 mA
Terminal Pitch 1 mm

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