MT8LSDT1664AG-13EE1
vs
MT8LSDT1664AG-13EB1
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
| Part Package Code |
DIMM
|
DIMM
|
| Package Description |
,
|
,
|
| Pin Count |
168
|
168
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.32
|
8542.32.00.32
|
| Access Mode |
SINGLE BANK PAGE BURST
|
SINGLE BANK PAGE BURST
|
| Access Time-Max |
5.4 ns
|
5.4 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-XDMA-N168
|
R-XDMA-N168
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
1073741824 bit
|
1073741824 bit
|
| Memory IC Type |
SYNCHRONOUS DRAM MODULE
|
SYNCHRONOUS DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
168
|
168
|
| Number of Words |
16777216 words
|
16777216 words
|
| Number of Words Code |
16000000
|
16000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
16MX64
|
16MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare MT8LSDT1664AG-13EE1 with alternatives
Compare MT8LSDT1664AG-13EB1 with alternatives