MTA4ATF51264HZ-3G2R1
vs
MTA4ATF51264HZ-3G2J2
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
Reach Compliance Code |
unknown
|
compliant
|
Factory Lead Time |
13 Weeks, 3 Days
|
|
Samacsys Manufacturer |
Micron
|
|
Base Number Matches |
1
|
1
|
Package Description |
|
DIMM,
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8542.32.00.36
|
Access Mode |
|
SINGLE BANK PAGE BURST
|
Additional Feature |
|
AUTO/SELF REFRESH; WD-MAX
|
JESD-30 Code |
|
R-XDMA-N260
|
Length |
|
69.6 mm
|
Memory Density |
|
34359738368 bit
|
Memory IC Type |
|
DDR DRAM MODULE
|
Memory Width |
|
64
|
Number of Functions |
|
1
|
Number of Ports |
|
1
|
Number of Terminals |
|
260
|
Number of Words |
|
536870912 words
|
Number of Words Code |
|
512000000
|
Operating Mode |
|
SYNCHRONOUS
|
Operating Temperature-Max |
|
95 °C
|
Operating Temperature-Min |
|
|
Organization |
|
512MX64
|
Package Body Material |
|
UNSPECIFIED
|
Package Code |
|
DIMM
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
MICROELECTRONIC ASSEMBLY
|
Seated Height-Max |
|
30.13 mm
|
Self Refresh |
|
YES
|
Supply Voltage-Max (Vsup) |
|
1.26 V
|
Supply Voltage-Min (Vsup) |
|
1.14 V
|
Supply Voltage-Nom (Vsup) |
|
1.2 V
|
Surface Mount |
|
NO
|
Technology |
|
CMOS
|
Temperature Grade |
|
OTHER
|
Terminal Form |
|
NO LEAD
|
Terminal Position |
|
DUAL
|
Width |
|
2.5 mm
|
|
|
|