MTA4ATF51264HZ-3G2XX
vs
MTA4ATF51264HZ-3G2J2
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
| Package Description |
DIMM,
|
DIMM,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.36
|
8542.32.00.36
|
| Date Of Intro |
2017-05-26
|
|
| Access Mode |
SINGLE BANK PAGE BURST
|
SINGLE BANK PAGE BURST
|
| Additional Feature |
AUTO/SELF REFRESH; WD-MAX
|
AUTO/SELF REFRESH; WD-MAX
|
| JESD-30 Code |
R-XZMA-N260
|
R-XDMA-N260
|
| Length |
69.6 mm
|
69.6 mm
|
| Memory Density |
34359738368 bit
|
34359738368 bit
|
| Memory IC Type |
DDR4 DRAM MODULE
|
DDR DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
260
|
260
|
| Number of Words |
536870912 words
|
536870912 words
|
| Number of Words Code |
512000000
|
512000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
95 °C
|
| Operating Temperature-Min |
|
|
| Organization |
512MX64
|
512MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Code |
DIMM
|
DIMM
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Seated Height-Max |
30.13 mm
|
30.13 mm
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
1.26 V
|
1.26 V
|
| Supply Voltage-Min (Vsup) |
1.14 V
|
1.14 V
|
| Supply Voltage-Nom (Vsup) |
1.2 V
|
1.2 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
OTHER
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
ZIG-ZAG
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
2.5 mm
|
2.5 mm
|
| Base Number Matches |
1
|
1
|
|
|
|