MUPTB28 vs MXUPTB28E3 feature comparison

MUPTB28 Microchip Technology Inc

Buy Now Datasheet

MXUPTB28E3 Microchip Technology Inc

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Factory Lead Time 40 Weeks 40 Weeks
Samacsys Manufacturer Microchip
Additional Feature HIGH RELIABILITY, MIL-STD-750 HIGH RELIABILITY, MIL-STD-750
Breakdown Voltage-Min 31 V 31 V
Clamping Voltage-Max 47.8 V 47.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA DO-216AA
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1000 W 1000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-PRF-19500 AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-PRF-19500
Rep Pk Reverse Voltage-Max 28 V 28 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 28 V 28 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 1
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare MUPTB28 with alternatives

Compare MXUPTB28E3 with alternatives