MUR120SHM4
vs
NRVUS120VT3G
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
ONSEMI
|
| Package Description |
SMB, 2 PIN
|
SMB, 2 PIN
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
LOW POWER LOSS
|
FREE WHEELING DIODE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-214AA
|
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-J2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Output Current-Max |
1 A
|
2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Reference Standard |
AEC-Q101
|
AEC-Q101
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.035 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
C BEND
|
J BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
Yes
|
| Manufacturer Package Code |
|
403A-03
|
| Factory Lead Time |
|
14 Weeks
|
| Date Of Intro |
|
2017-02-23
|
| Samacsys Manufacturer |
|
onsemi
|
| Application |
|
HIGH VOLTAGE ULTRA FAST RECOVERY POWER
|
| Forward Voltage-Max (VF) |
|
0.875 V
|
| Non-rep Pk Forward Current-Max |
|
40 A
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reverse Current-Max |
|
2 µA
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MUR120SHM4 with alternatives
Compare NRVUS120VT3G with alternatives