MV1626 vs 1SV214TPHR4 feature comparison

MV1626 Msi Electronics Inc

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1SV214TPHR4 Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MSI ELECTRONICS INC TOSHIBA CORP
Package Description O-LALF-W2 R-PDSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 20 V 30 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Cap Tolerance 10%
Diode Capacitance Ratio-Min 2 5.9
Diode Capacitance-Nom 12 pF 15.21 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code O-LALF-W2 R-PDSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 125 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Power Dissipation-Max 0.4 W
Qualification Status Not Qualified Not Qualified
Quality Factor-Min 300
Rep Pk Reverse Voltage-Max 20 V
Reverse Current-Max 0.1 µA 0.01 µA
Reverse Test Voltage 15 V 28 V
Surface Mount NO YES
Terminal Form WIRE GULL WING
Terminal Position AXIAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 12 1
Additional Feature SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE

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Compare 1SV214TPHR4 with alternatives