MV1626
vs
BB640
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MSI ELECTRONICS INC
|
SIEMENS A G
|
| Package Description |
O-LALF-W2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
20 V
|
30 V
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Cap Tolerance |
10%
|
|
| Diode Capacitance Ratio-Min |
2
|
19.5
|
| Diode Capacitance-Nom |
12 pF
|
7.6 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
|
| JESD-30 Code |
O-LALF-W2
|
R-PDSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.4 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Quality Factor-Min |
300
|
|
| Rep Pk Reverse Voltage-Max |
20 V
|
30 V
|
| Reverse Current-Max |
0.1 µA
|
0.01 µA
|
| Reverse Test Voltage |
15 V
|
30 V
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
AXIAL
|
DUAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
|
| Base Number Matches |
12
|
2
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare MV1626 with alternatives
Compare BB640 with alternatives