MX1N8170US
vs
1N8170USE3
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
MELF-2
|
MELF-2
|
Reach Compliance Code |
compliant
|
compliant
|
Factory Lead Time |
25 Weeks
|
21 Weeks
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Breakdown Voltage-Min |
58.9 V
|
58.9 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
85.3 V
|
85.3 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
Non-rep Peak Rev Power Dis-Max |
150 W
|
150 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
1 W
|
1 W
|
Reference Standard |
IEC-61000-4-2, 4-4; MIL-19500
|
IEC-61000-4-2, 4-4
|
Rep Pk Reverse Voltage-Max |
53 V
|
53 V
|
Surface Mount |
YES
|
YES
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare MX1N8170US with alternatives
Compare 1N8170USE3 with alternatives