MXLP6KE100AE3 vs P6KE100 feature comparison

MXLP6KE100AE3 Microchip Technology Inc

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P6KE100 TDK Micronas GmbH

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC ITT SEMICONDUCTOR
Package Description ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 105 V 110 V
Breakdown Voltage-Min 95 V 90 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.47 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 85.5 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 100 V
Clamping Voltage-Max 144 V
Reverse Current-Max 5 µA

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