MXLSMCJ8.0AE3 vs MSMCJ8.0A/TR feature comparison

MXLSMCJ8.0AE3 Microchip Technology Inc

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MSMCJ8.0A/TR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN PLASTIC, SMCJ, 2 PIN
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 9.83 V 9.83 V
Breakdown Voltage-Min 8.89 V 8.89 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.56 W 1.56 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 8 V 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 9.36 V
Clamping Voltage-Max 13.6 V

Compare MXLSMCJ8.0AE3 with alternatives

Compare MSMCJ8.0A/TR with alternatives