MXLSMCJLCE110AE3 vs MSMCJLCE110AE3 feature comparison

MXLSMCJLCE110AE3 Microchip Technology Inc

Buy Now Datasheet

MSMCJLCE110AE3 Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN SMCJ, 2 PIN
Reach Compliance Code compliant compliant
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 135 V 135 V
Breakdown Voltage-Min 122 V 122 V
Breakdown Voltage-Nom 128.5 V 128.5 V
Clamping Voltage-Max 178 V 178 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 110 V 110 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Factory Lead Time 40 Weeks
Diode Capacitance-Min 90 pF
Reference Standard IEC-61000-4-2, 4-4, 4-5
Reverse Current-Max 5 µA
Reverse Test Voltage 110 V

Compare MXLSMCJLCE110AE3 with alternatives

Compare MSMCJLCE110AE3 with alternatives