MXPLAD15KP11CAE3 vs MXLPLAD15KP11CAE3 feature comparison

MXPLAD15KP11CAE3 Microchip Technology Inc

Buy Now Datasheet

MXLPLAD15KP11CAE3 Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 13.5 V 13.5 V
Breakdown Voltage-Min 12.2 V 12.2 V
Breakdown Voltage-Nom 12.85 V 12.85 V
Clamping Voltage-Max 18.2 V 18.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 R-PSSO-G1
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 15000 W 15000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 11 V 11 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 2
Package Description R-PSSO-G1
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection CATHODE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MXPLAD15KP11CAE3 with alternatives

Compare MXLPLAD15KP11CAE3 with alternatives